News: AMD, un passo in avanti nella ricerca

[Staff]

<br>AMD annuncia ufficialmente di aver realizzato in laboratorio e già testato a fondo un nuovo transistor che permetterà un incremento delle prestazioni fino al 30% in più rispetto al classico PMOS (P-channel metal-oxide semiconductor).<p>
Questo l'annuncio:<br>
<blockquote><i>SUNNYVALE, CA -- April 2, 2003 --AMD (NYSE: AMD) researchers have become the first in the semiconductor industry to achieve critical research milestones for next-generation transistor development.
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In lab work to be fully unveiled in June, AMD researchers have created and demonstrated a high-performance transistor that is up to 30% faster than the best published PMOS (P-channel metal-oxide semiconductor) transistor today. The transistor employs proprietary AMD technologies involving what is commonly referred to as Fully Depleted Silicon-on-Insulator.
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In related research, AMD researchers have also become the first in the industry to demonstrate a strained silicon transistor achieving 20-25% higher performance than conventional strained silicon devices through the successful use of metal gates.
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These achievements are key milestones in AMD’s aggressive process technology roadmap, enabling the design of future microprocessors that can meet customers’ top requirements.
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“By staying at the forefront of research on transistors that operate with higher performance, less current leakage and lower voltage requirements, we are providing AMD design teams with the building blocks they need to create the solutions customers want,” said Craig Sander, vice president of process technology development at AMD.
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“Good design starts with having the right tools and materials,” added Fred Weber, vice president and chief technical officer for AMD’s Computation Products Group. “Advanced research such as this is what ultimately enables AMD to deliver the leading-edge functionality and architectural elegance that customers have come to expect from us.”
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