News: Insonics e AMD
Inviato: 29 nov 2002, 15:47<br>Come già da tempo si vociferava del rapporto tra il produttore di silicio Insonics e AMD, ecco che arrivano nuove <a href="http://www.theinquirer.net/?article=6460">informazioni</a> a riguardo.<br>
AMD avrebbe scelto tale partner sia per la sua alta capacità di produzione di silicio (120'000 wafers all'anno), sia per l'alta conduttività termica del Silcio 28, prodotto dalla Insonics.
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Last week the CEO, James E. Alexander, addressed the firm's annual shareholders meetings and brought us up to date on its activities.<br><br>
He complained that the share price of Isonics (ticker ISON) was undervalued, particularly mentioning its SOI wafer business.<br><br>
Last month it opened its own SOI wafer fabrication plant and he estimated that in 2003 that market will grow by 72%, quoting Dataquest figures. The capacity for SOI wafers is 120,000 a year, and he said it had targeted 10 customers, seven of which had asked their names be kept confidential.
<br>
But, he said, applications include microprocessors, and its pure silicon, silicon 28, has properties including better gate oxide integrity.
AMD avrebbe scelto tale partner sia per la sua alta capacità di produzione di silicio (120'000 wafers all'anno), sia per l'alta conduttività termica del Silcio 28, prodotto dalla Insonics.
<p><i><blockquote>
Last week the CEO, James E. Alexander, addressed the firm's annual shareholders meetings and brought us up to date on its activities.<br><br>
He complained that the share price of Isonics (ticker ISON) was undervalued, particularly mentioning its SOI wafer business.<br><br>
Last month it opened its own SOI wafer fabrication plant and he estimated that in 2003 that market will grow by 72%, quoting Dataquest figures. The capacity for SOI wafers is 120,000 a year, and he said it had targeted 10 customers, seven of which had asked their names be kept confidential.
<br>
But, he said, applications include microprocessors, and its pure silicon, silicon 28, has properties including better gate oxide integrity.