Da Hynix R-Dimm e SO-Dimm DDR2-533
Hynix Semiconductor ha annunciato i nuovi moduli di memoria Registered-Dimm, con capacità di 4GB, e SO-Dimm, da 2GB, DDR2 a 533MHz.
Caratteristiche tecniche:
VDD = 1.8V, VDDQ = 1.8V
I/O = SSTL_18
533Mbps/pin linear throughput
Up to 4,300MB/s performance in 64-bit systems
4 and 8 packet lengths
WRITE latency = READ latency = 1 clock
Differential strobe
Off-chip output driver calibration (OCD)
On-die termination (ODT)
Tags:
